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TSD1664
Low Vcesat NPN Transistor
SOT-89 SOT-223
Pin Definition: 1. Base 2. Collector 3. Emitter
PRODUCT SUMMARY
BVCEO BVCBO IC VCE(SAT) 32V 40V 1A 0.15V @ IC / IB = 500mA / 50mA
Features
Low VCE(SAT) 0.15V @ IC / IB = 500mA / 50mA (Typ.) Complementary part with TSB1132
Ordering Information
Part No.
TSD1664CY RM TSD1664CW RP
Package
TO-92 TO-223
Packing
1Kpcs / 7" Reel 2.5Kpcs / 13" Reel
Structure
Epitaxial Planar Type NPN Silicon Transistor
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw=20ms, Duty50% 2. When mounted on a 40 x 50 x 0.7mm ceramic board. DC Pulse
Symbol
VCBO VCEO VEBO IC PD TJ TSTG
Limit
40 32 5 1 2 (note1) 0.5 2 (note 2) +150 - 55 to +150
Unit
V V V A W
o o
C C
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance hFE values are classified as follows: Rank P Q hFE 82~180 120~270
Conditions
IC = 50uA, IE = 0 IC = 1mA, IB = 0 IE = 50uA, IC = 0 VCB = 20V, IE = 0 VEB = 4V, IC = 0 IC / IB = 500mA / 50mA VCE = 3V, IC = 100mA VCE =5V, IC=-50mA, f=100MHz VCB = 10V, IE = 0, f=1MHz
Symbol
BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE fT Cob
Min
40 32 5 ---82 50 --
Typ
-----0.15 -150 10
Max
---0.5 0.5 0.4 390 -20
Unit
V V V uA uA V
MHz pF
R 180~390
1/5
Version: A07
TSD1664
Low Vcesat NPN Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic
Figure 3. Transition Frequency v.s. IE
Figure 4. Collector Output Capacitance vs. Vcb
2/5
Version: A07
TSD1664
Low Vcesat NPN Transistor
SOT-89 Mechanical Drawing
DIM A B C D E F G H I J
SOT-89 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.40 4.60 0.173 0.181 1.50 1.7 0.059 0.070 2.30 2.60 0.090 0.102 0.40 0.52 0.016 0.020 1.50 1.50 0.059 0.059 3.00 3.00 0.118 0.118 0.89 1.20 0.035 0.047 4.05 4.25 0.159 0.167 1.4 1.6 0.055 0.068 0.35 0.44 0.014 0.017
3/5
Version: A07
TSD1664
Low Vcesat NPN Transistor
SOT-223 Mechanical Drawing
DIM A B C D E F G H I J K
SOT-223 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.350 6.850 0.250 0.270 2.900 3.100 0.114 0.122 3.450 3.750 0.136 0.148 0.595 0.635 0.023 0.025 4.550 4.650 0.179 0.183 2.250 2.350 0.088 0.093 0.835 1.035 0.032 0.041 6.700 7.300 0.263 0.287 0.250 0.355 0.010 0.014 10 16 10 16 1.550 1.800 0.061 0.071
4/5
Version: A07
TSD1664
Low Vcesat NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
5/5
Version: A07

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